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Ge is a promising candidate to replace Si for future CMOS because of its high mobility. However, the kinetic study on GeO2/Ge is still insufficient to meet the requirement for the control of GeO2/Ge stack. In this book, the kinetics in GeO desorption, GeO2 crystallization and Ge oxidation in GeO2/Ge system are systematically investigated.

Product Details

Edition
First Edition
Language
English
Format
PDF eBook
Properties
5x8, 232 pages